features ? switching application marking: zc m aximum r at ings (t a =25 unless otherwise noted ) symbol parameter value unit v cbo collector - base voltage 30 v v ceo collector - emitter voltage 25 v v ebo emitter - base voltage 5 v i c collector current 200 m a p c collector power dissipation 330 m w r ja thermal resistance from j u nction to a mbient 378 /w t j junction temperature 150 t stg storage temperature - 55 + 150 electrical characteristics ( t a =25 unless otherwise specified) p arameter symbol test conditions m in t yp m ax u nit collector - base breakdown voltage v (br) cbo i c = 1 0 a, i e =0 30 v collector - emitter breakdown voltage v (br) c e o * i c = 1 ma, i b =0 25 v emitter - base breakdown voltage v (br)eb o i e = 10 a , i c =0 5 v collector cut - off current i cbo v cb = 20 v, i e =0 50 n a emitter cut - off current i ebo v eb = 3 v, i c =0 50 n a h fe (1) * v ce = 1 v, i c = 2m a 120 360 dc current gain h fe (2) * v ce = 1 v, i c = 5 0 ma 60 collector - emitter saturation voltage v ce(sat) * i c = 50 ma, i b = 5 ma 0.3 v b ase - emitter saturation voltage v b e(sat) * i c = 50 ma, i b = 5 ma 0.95 v transition frequency f t v ce = 20 v,i c = 10 ma , f=1 00 mhz 300 mhz collector output capacitance c ob v cb = 5 v, i e =0, f=1 40k hz 4 pf e mitter input capacitance c i b v b e = 0.5 v, i e =0, f=1 40k hz 8 pf * p ulse test so t C 23 1. base 2. emitter 3. collec tor transistor (npn) FMMT4124 1 date:2011/05 www.htsemi.com semiconductor jinyu
|
